?2011 fairchild semiconductor corporation 1 www.fairchildsemi.com FGD4536 rev. a FGD4536 360v, pdp igbt march 2011 absolute maximum ratings thermal characteristics notes: (1) half sine wave, d < 0.01, pluse width < 1 sec * ic_pluse limited by max tj symbol description ratings units v ces collector to emitter voltage 360 v v ges gate to emitter voltage 30 v i c pulse(1)* pulsed collector current @ t c = 25 o c220 a p d maximum power dissipation @ t c = 25 o c125 w maximum power dissipation @ t c = 100 o c50 w t j operating junction temperature -55 to +150 o c t stg storage temperature range -55 to +150 o c t l maximum lead temp. for soldering purposes, 1/8? from case for 5 seconds 300 o c symbol parameter typ. max. units r jc (igbt) thermal resistance, junction to case - 1.0 o c / w r ja thermal resistance, junction to ambient - 62.5 o c / w d-pak g e c FGD4536 360v, pdp igbt features ? high current capability ? low saturation voltage: v ce (sat) =1.59 v @ i c = 50 a ? high input impedance ?fast switching ?rohs compliant application ? pdp system general description using novel trench igbt technolog y, fairchild?s new series of trench igbts offer the optimum performance for pdp applications where low conduction and switching losses are essential.
2 www.fairchildsemi.com FGD4536 rev. a FGD4536 360v, pdp igbt package marking and ordering information electrical characteris tics of the igbt t c = 25c unless otherwise noted device marking device package reel size tape width quantity FGD4536 FGD4536tm to252 380mm 16mm - symbol parameter test conditions min. typ. max. units off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 360 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a -0.4-v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 100 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 2.4 3.3 4.0 v v ce(sat) collector to emitter saturation voltage i c = 20a , v ge = 15v -1.19- v i c = 30a , v ge = 15v -1.33- v i c = 50a , v ge = 15v, t c = 25 o c - 1.59 1.8 v i c = 50a , v ge = 15v, t c = 125 o c -1.66- v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1295 - pf c oes output capacitance - 56 - pf c res reverse transfer capacitance - 43 - pf switching characteristics t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 ? , v ge = 15v, resistive load, t c = 25 o c -5-ns t r rise time - 20 - ns t d(off) turn-off delay time - 41 - ns t f fall time - 182 - ns t d(on) turn-on delay time v cc = 200v, i c = 20a, r g = 5 ? , v ge = 15v, resistive load, t c = 125 o c -5-ns t r rise time - 21 - ns t d(off) turn-off delay time - 43 - ns t f fall time - 249 - ns q g total gate charge v ce = 200v , i c = 20a, v ge = 15v -47-nc q ge gate to emitter charge - 5.4 - nc q gc gate to collector charge - 15 - nc
3 www.fairchildsemi.com FGD4536 rev. a FGD4536 360v, pdp igbt typical performance characteristics figure 1. typical output characteristics figure 2. typical output char acteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temp erature at variant current level 0123456 0 50 100 150 200 12v 20v t c = 25 o c 15v 10v v ge = 8v collector current, i c [a] collector-emitter volta g e , v ce [ v ] 0123456 0 50 100 150 200 12v 10v 20v t c = 125 o c 15v v ge = 8v collector current, i c [a] collector-emitter voltage, v ce [v] 0123456 0 50 100 150 200 common emitter v ge = 15v t c = 25 o c t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v] 024681012 0 50 100 150 200 common emitter v ce = 10v t c = 25 o c t c = 125 o c collector current, i c [a] gate-emitter voltage,v ge [v] 0 4 8 12 16 20 0 4 8 12 16 20 30a i c = 20a 50a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 20 40 60 80 100 120 140 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 30a 50a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c ]
4 www.fairchildsemi.com FGD4536 rev. a FGD4536 360v, pdp igbt typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. capacitance characteristics figure 9. gate charge characteristics figure 10. soa characteristics figure 11. turn-on characteristics vs. figure 12. turn-off characteristics vs. 0 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 50a 30a common emitter t c = 125 o c collector-emitter voltage, v ce [ v ] gate-emitter voltage, v ge [v] 0.1 1 10 30 0 400 800 1200 1600 2000 2400 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 0 1020304050 0 3 6 9 12 15 common emitter t c = 25 o c 200v v cc = 100v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0.1 1 10 100 1000 0.01 0.1 1 10 100 500 single nonrepetitive pulse t c = 25 o c curves must be derated linearly with increase in temperature 1ms dc 10 s 100 s collector current, i c [a] collector-emitter voltage, v ce [v] 0 1020304050 1 10 100 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 0 1020304050 10 100 1000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] gate resistance gate resistance
5 www.fairchildsemi.com FGD4536 rev. a FGD4536 360v, pdp igbt typical performance characteristics figure 13. turn-on characteristics vs. figure 14. turn-off characteristics vs. collector current collector current figure 15. switching loss vs. gate resistance figure 16. switching loss vs. collector current figure 17. turn off switching soa characteristics 10 20 30 40 50 1 10 100 common emitter v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c t r t d(on) switching time [ns] collector current, i c [a] 10 20 30 40 50 10 100 400 common emitter v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c t d(off) t f switching time [ns] collector current, i c [a] 10 20 30 40 50 1 10 100 1000 common emitter v ge = 15v, r g = 5 ? t c = 25 o c t c = 125 o c e on e off switching loss [uj] collector current, i c [a] 0 1020304050 10 100 1000 5000 common emitter v cc = 200v, v ge = 15v i c = 20a t c = 25 o c t c = 125 o c e on e off switching loss [uj] gate resistance, r g [ ? ] 1 10 100 500 0.1 1 10 100 500 safe operating area v ge = 15v, t c = 125 o c collector current, i c [a] collector-emitter voltage, v ce [v]
6 www.fairchildsemi.com FGD4536 rev. a FGD4536 360v, pdp igbt typical performance characteristics figure 18.transient thermal impedanc e of igbt 10 -5 10 -4 10 -3 10 -2 10 -1 0.01 0.1 1 2 0.05 0.01 0.02 0.1 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
7 www.fairchildsemi.com FGD4536 rev. a FGD4536 360v, pdp igbt dimensions in millimeters mechanical dimensions d-pak
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